| PART |
Description |
Maker |
| KMD6D0DN40Q |
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters.
|
KEC(Korea Electronics)
|
| AP18N20GH-HF AP18N20GH-HF-16 AP18N20GJ-HF |
Fast Switching Characteristics
|
Advanced Power Electron...
|
| AP4002J-HF AP4002H-HF14 AP4002H-HF-14 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fast Switching Characteristics
|
Advanced Power Electronics ...
Advanced Power Electronics Corp.
|
| AP2762S-A-HF AP2762S-A-HF-14 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fast Switching Characteristics
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| AP15T20AGH-HF14 |
Simple Drive Requirement
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristics
|
Advanced Power Electronics Corp.
|
| XC6VLX75T XC6VLX240T XC6VSX315T XC6VSX475T XC6VHX5 |
Virtex-6 FPGA Data Sheet: DC and Switching Characteristics
|
Xilinx, Inc
http://
|
| SLF12575T-100M5R4-PF SLF12575T-6R8N5R9-PF |
L-Q Frequency Characteristics DC Bias & Temperature Characteristics Temperature Characteristics Temperature Rise
|
TDK Electronics
|
| LVCMOS12-F12 LVCMOS12-F8 XA7A15T XC7A100T DS181 |
DC and AC Switching Characteristics
DC and AC Switching Characteristics
|
Xilinx, Inc
|
| DK1308FWM DK13 DK1306FWK DK1306FWM DK1308FWK DK130 |
800V fast switching thyristor
CAP,POLYEST,RAD,0.1UF,5%,63V
Fast Switching Thyristor 110 A, 800 V, SCR, TO-94
|
DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
Dynex Semiconductor, Ltd.
|
| TF92125H TF921 TF92122H TF92124H |
Fast Switching Thyristor
2200V fast switching thyristor
2400V fast switching thyristor
2500V fast switching thyristor
|
DYNEX[Dynex Semiconductor]
|
| XP151A02BOMR XP151A02B0MR |
N-Channel Power MOS FET with low on-state resistance and ultra High-Speed Switching Characteristics.
|
TOREX SEMICONDUCTOR LTD.
TOREX[Torex Semiconductor]
|
